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Wafer Technology Ltd

34 Maryland Road
Milton Keynes
MK15 8HJ
United Kingdom

+44 (0)1908 210444

+44 (0)1908 210443


News & Events

4th February 2010
Wafer Technology launches new 4” GaSb product range

Milton Keynes, UK. 4th February 2010: IQE plc (AIM: IQE, “IQE” or the “Group”), the leading global supplier of advanced semiconductor wafer products and wafer services to the semiconductor industry, is pleased to announce that its UK based wafer operation, Wafer Technology Ltd., is to extend its gallium antimonide (GaSb) product range to include 4” diameter wafers.

GaSb materials are used in the manufacture of a wide range of products including infrared laser diodes, detectors and thermophotovoltaic (TPV) cells that can convert infrared (heat) energy into electrical power.

4” GaSb-Te wafers are now available and can be specified in the same way as for existing 2” and 3” GaSb products. High accuracy orientations (+/-0.1 deg.) and proprietary epitaxy ready finishes are offered to ensure consistent performance in epitaxial growth. Whole 4” wafer etch pit density (EPD) maps (69 points) are supplied to support yield maximisation in the manufacture of large area detector arrays.

The new product offering will be produced at the Group’s Wafer Technology facility in Milton Keynes, UK.

Dr. Mark J. Furlong, General Manager at Wafer Technology, commented:

“Delivering 4” GaSb product is an important milestone for Wafer Technology, especially at a time when the industry is looking to produce larger area epitaxially grown arrays.

“Our 4” GaSb wafers have been very well received by our first customers qualifying this product, so we are looking forward to satisfying new demands for large area GaSb wafers in 2010.”

Wafer Technology:
Dr. Mark J. Furlong
+44 (0)19 0821 0444

18th February 2009
Wafer Technology to lead £2 million 4” GaSb Thermo-Photovoltaic (TPV) Project

Wafer Technology Ltd., is pleased to announce that it will lead a collaborative effort to develop highly efficient thermo-photovoltaic (TPV) cells for electricity generation from waste heat from industrial processes.

 The £2M project has been awarded by the Technology Strategy Board. Wafer Technology will lead a consortium of partners including Lancaster University and QinetiQ.

 The project aims to realise novel low bandgap TPV devices based on alloys including InAsSb and InGaSbN lattice matched to GaSb substrates. Such cells will exhibit significantly higher efficiencies than existing devices and will more effectively generate electricity from waste heat sources at temperatures below 1000ºC.

 Wafer Technology’s contribution will be to extend their world leading GaSb substrate technology to 4” diameter. Lancaster and QinetiQ will undertake epitaxial growth studies of these novel narrow gap alloys and QinetiQ will also fabricate the devices. Prototype TPV systems will be validated by two further industrial partners to assess their performance in real industrial processes and environments.

Commenting on the project, Dr Mark Furlong, Wafer Technology’s Sales and Marketing Director said: “Thermo-voltaic cells will play an important role in the drive towards providing an efficient and cost effective way of recovering waste energy from a wide range of industrial processes and recycling that energy into electricity. TPV’s add to the growing portfolio of the Group’s energy efficient products that include ultra high brightness LEDs and high efficiency concentrator-photovoltaic (CPV) solar cells.”

Technical / sales: Wafer Technology Ltd
(+44 19 0821 0444)
Becky Martinez

14th October 2008
Wafer Technology InP used to achieve ground breaking thermo-photovoltaic energy conversion record

Wafer Technology today announces a new energy conversion efficiency record for thermo-photovoltaic (TPV) cells. In partnership with CIP Technologies and the University of Oxford, and with partial funding from the UK Technology Strategy Board and EPSRC, a successful three year collaborative research project has delivered first generation single-junction cells with energy conversion efficiencies up to 12%. This compares to 9% from existing, commercially available devices.

TPVs are similar to solar cells, but operate at infrared rather than visible wavelengths, generating electricity directly from heat. They have applications in waste heat recovery from industrial plant such as blast furnaces, combined heat and power (CHP) generation and domestic boilers, as well as silent mobile power generation.

On the TPV project, CIP is responsible for epitaxial growth, device fabrication and the fabrication of fully packaged TPV modules. Wafer Technology developed a new range of low cost InP substrates, and the University of Oxford engaged in cell design and device testing.

Brian Smith, Wafer Technology’s Crystal Growth Manager, commented, “We are very pleased to have contributed the InP substrates upon which these world-class results have been achieved. Our success in developing a new range of InP products specifically targeting TPV applications is a significant achievement and these results affirm Wafer Technology’s strength in advanced crystal growth and substrate manufacturing technologies”.

The partners in the TPV project are:

Wafer Technology
CIP Technologies
Physics Dept., Oxford University



Wafer Technology (Sales):
Dr. Mark J. Furlong
+44 (0)19 0821 0444

19th July 2007

Wafer Technology GaSb powers award winning two-colour thermal imaging technology

Technology Ltd. is pleased to announce that the Fraunhofer IAF of Freiburg, Germany has received the prestigious 2006 Baden-Württemberg financial award (Euro 100,000) for its research and development of InAs/GaSb based two-colour thermal imaging cameras, a technology that has been realised with the exclusive use of Wafer Technology epitaxy-ready GaSb substrates. Using molecular beam epitaxy (MBE) to deposit InAs/GaSb type-II superlattices (SL), the Fraunhofer IAF has delivered a world first bi-spectral imaging system.

Dr. Mark Furlong, Director of Sales and Marketing at Wafer Technology commented, "We are delighted to be able to support the 2" and 3" GaSb substrate requirements of this programme and congratulate Dr. Martin Walther and his team on this work. The highest quality of wafers is an absolute must for these imaging arrays and we are pleased to have met this challenge. These results affirm Wafer Technology's position as the leading supplier of epitaxy-ready antimonide materials".

Dr. Martin Walther commented, "Our new infrared detector is ideally suited for new state of the art early warning defence systems and as such has a big market potential within the civil and military aviation industry".

For further details of the award, please refer to:

6th April 2006
Monocrystal Sapphire added to Wafer Technology Portfolio
Wafer Technology is pleased to announce the expansion of its epitaxy ready wafer range with the introduction of Monocrystal sapphire wafers.

Dasha Vitol, Sales Manager for Europe stated “Monocrystal is pleased to support Wafer Technology as our new partner in Europe. We see the European sapphire market as very promising and one that is fast growing. It demands high-quality products which Monocrystal is happy to offer to the customers of Wafer Technology”.

Dr. Mark J. Furlong, Sales and Marketing Director of Wafer Technology, commented "Wafer Technology is delighted to promote this range of sapphire products. The addition of Monocrystal's substrates to our product portfolio means that we can now offer an even broader range of compound semiconductor materials to our customers".

About Monocrystal PLC

Monocrystal PLC, a member of the Energomera Group is headquartered in Stavropol, Russia. It was founded in 1984 and is one of the world's largest sapphire growing and processing facilities.

1st March 2006
Wafer Technology Shares in DTI Award to Develop new InP based Thermophotovoltaic Devices

Wafer Technology is pleased to announce its participation in a new project to develop high efficiency ThermoPhotoVoltaic (TPV) cell technology based on InP substrate material. In partnership with the Centre for Integrated Photonics and Oxford University, funding from the DTI and EPSRC through the Technology Programme will support a three year project to develop low cost high efficiency TPV cells based on the InGaAs/InP material system.

Wafer Technology will be responsible for developing a new range of low cost InP substrate technologies. CIP will perform epitaxial growth, device fabrication and testing, and the University of Oxford will engage in cell design and the fabrication of fully packaged TPV modules.

Ray Brunton, the Company’s Crystal Growth Operations Manager commented “As Europe’s leading manufacturer of InP substrates and the main producer worldwide of GaSb used in existing TPV devices, Wafer Technology has a long standing involvement in TPV technology through other collaborative projects, and is ideally placed to assess, control and exploit the effects of starting material quality and price on the performance and cost of TPV devices.”

Minister for Science and Innovation Lord Sainsbury said: “The Technology Strategy helps develop competitive advantage for British businesses so they can be at the cutting edge of the global knowledge-based economy."

“It is about encouraging collaboration in order that companies can invest for the future and develop new world-beating products."

“I congratulate the project participants and wish them every success.”

Notes to editors

This project is part-funded by a Collaborative R&D grant under the DTI Technology Programme.
Further information can be found at:

7th February 2006
Wafer Technology Authors Leading Reference on Indium Phosphide Crystal Growth

Wafer Technology's expertise in crystal growth has been recognised by an invited contribution to a leading new reference entitled Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials (Wiley).   Encompassing topics which include synthesis, single crystal growth and dislocation reduction, this work provides a thorough reference for all aspects of indium phosphide growth and is based on the company’s many years of experience in manufacturing high quality ingot and a diverse range of indium phosphide wafer products in epitaxy-ready form.

Please click here for more information on this important publication.

Wafer Technology is the leading European manufacturer of indium phosphide and a wide range of other III-V compounds including GaAs, InAs, GaSb and InSb. The company employs 40 people at its manufacturing plant in England and is currently recruiting for a variety of new positions.