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Wafer Technology Ltd
34 Maryland Road
Tongwell
Milton Keynes
Bucks
MK15 8HJ
United Kingdom
Telephone:
+44 (0)1908 210444
Facsimile:
+44 (0)1908 210443
Email: sales@wafertech.co.uk
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4th February 2010
Wafer Technology launches new 4” GaSb product range
Milton Keynes, UK. 4th February 2010:
IQE plc (AIM: IQE,
“IQE” or the “Group”), the leading global supplier of
advanced semiconductor wafer products and wafer services to
the semiconductor industry, is pleased to announce that its
UK based wafer operation, Wafer Technology Ltd., is to
extend its gallium antimonide (GaSb) product range to
include 4” diameter wafers.
GaSb materials are used
in the manufacture of a wide range of products including
infrared laser diodes, detectors and thermophotovoltaic
(TPV) cells that can convert infrared (heat) energy into
electrical power.
4” GaSb-Te wafers are now available
and can be specified in the same way as for existing 2” and
3” GaSb products. High accuracy orientations (+/-0.1 deg.)
and proprietary epitaxy ready finishes are offered to ensure
consistent performance in epitaxial growth. Whole 4” wafer
etch pit density (EPD) maps (69 points) are supplied to
support yield maximisation in the manufacture of large area
detector arrays.
The new product offering will be
produced at the Group’s Wafer Technology facility in Milton
Keynes, UK.
Dr. Mark J. Furlong, General Manager at
Wafer Technology, commented:
“Delivering 4” GaSb
product is an important milestone for Wafer Technology,
especially at a time when the industry is looking to produce
larger area epitaxially grown arrays.
“Our 4” GaSb
wafers have been very well received by our first customers
qualifying this product, so we are looking forward to
satisfying new demands for large area GaSb wafers in 2010.”
Contact:
Wafer Technology:
Dr. Mark J. Furlong
+44 (0)19 0821 0444
18th February 2009
Wafer Technology to lead £2 million 4” GaSb
Thermo-Photovoltaic (TPV) Project
Wafer Technology Ltd., is pleased to
announce that it will lead a collaborative effort to develop
highly efficient thermo-photovoltaic (TPV) cells for
electricity generation from waste heat from industrial
processes.
The £2M project has been
awarded by the Technology Strategy Board. Wafer Technology
will lead a consortium of partners including Lancaster University
and QinetiQ.
The project aims to realise
novel low bandgap TPV devices based on alloys including
InAsSb and InGaSbN lattice matched to GaSb substrates. Such
cells will exhibit significantly higher efficiencies than
existing devices and will more effectively generate
electricity from waste heat sources at temperatures below
1000ºC.
Wafer Technology’s contribution will be to
extend their world leading GaSb substrate technology to 4”
diameter. Lancaster and QinetiQ will undertake epitaxial
growth studies of these novel narrow gap alloys and QinetiQ
will also fabricate the devices. Prototype TPV systems will
be validated by two further industrial partners to assess
their performance in real industrial processes and
environments.
Commenting on the project, Dr Mark Furlong, Wafer
Technology’s Sales and Marketing Director said:
“Thermo-voltaic cells will play an important role in the
drive towards providing an efficient and cost effective way
of recovering waste energy from a wide range of industrial
processes and recycling that energy into electricity. TPV’s
add to the growing portfolio of the Group’s energy efficient
products that include ultra high brightness LEDs and high
efficiency concentrator-photovoltaic (CPV) solar cells.”
Contact:
Technical / sales: Wafer Technology Ltd
(+44 19 0821 0444)
Becky Martinez:
bmartinez@wafertech.co.uk
14th October 2008
Wafer Technology InP
used to achieve ground breaking thermo-photovoltaic energy
conversion record
Wafer
Technology today announces a new energy conversion
efficiency record for thermo-photovoltaic (TPV) cells. In
partnership with CIP Technologies and the University of
Oxford, and with partial funding from the UK Technology
Strategy Board and EPSRC, a successful three year
collaborative research project has delivered first
generation single-junction cells with energy conversion
efficiencies up to 12%. This compares to 9% from existing,
commercially available devices.
TPVs are similar to solar cells, but operate at infrared
rather than visible wavelengths, generating electricity
directly from heat. They have applications in waste heat
recovery from industrial plant such as blast furnaces,
combined heat and power (CHP) generation and domestic
boilers, as well as silent mobile power generation.
On the TPV project, CIP is responsible for epitaxial growth,
device fabrication and the fabrication of fully packaged TPV
modules. Wafer Technology developed a new range of low cost
InP substrates, and the University of Oxford engaged in cell
design and device testing.
Brian Smith, Wafer Technology’s Crystal Growth Manager,
commented, “We are very pleased to have contributed the InP
substrates upon which these world-class results have been
achieved. Our success in developing a new range of InP
products specifically targeting TPV applications is a
significant achievement and these results affirm Wafer
Technology’s strength in advanced crystal growth and
substrate manufacturing technologies”.
The partners in the TPV project are:
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Wafer Technology |
www.wafertech.co.uk |
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CIP Technologies |
www.ciphotonics.com |
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Physics Dept., Oxford
University |
www.physics.ox.ac.uk |
Contact:
Wafer Technology (Sales):
Dr. Mark J. Furlong
+44 (0)19 0821 0444
19th
July 2007
Wafer Technology GaSb powers award winning
two-colour thermal imaging technology
Wafer
Technology Ltd. is pleased
to announce that the Fraunhofer IAF of Freiburg, Germany has
received the prestigious 2006 Baden-Württemberg financial
award (Euro 100,000) for its research and development of InAs/GaSb
based two-colour thermal imaging cameras, a technology that
has been realised with the exclusive use of Wafer Technology
epitaxy-ready GaSb substrates. Using molecular beam epitaxy
(MBE) to deposit InAs/GaSb type-II superlattices (SL), the
Fraunhofer IAF has delivered a world first bi-spectral imaging
system.
Dr. Mark Furlong, Director of Sales and Marketing at Wafer
Technology commented, "We are delighted to be able to
support the 2" and 3" GaSb substrate requirements
of this programme and congratulate Dr. Martin Walther and
his team on this work. The highest quality of wafers is an
absolute must for these imaging arrays and we are pleased
to have met this challenge. These results affirm Wafer Technology's
position as the leading supplier of epitaxy-ready antimonide
materials".
Dr. Martin Walther commented, "Our new infrared detector
is ideally suited for new state of the art early warning defence
systems and as such has a big market potential within the
civil and military aviation industry".
For further details of the award, please refer to:
http://mwk.baden-wuerttemberg.de/themen/forschung/forschungsfoerderung/landesforschungspreis/landesforschungspreis-2006
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6th
April 2006
Monocrystal Sapphire added to Wafer Technology
Portfolio
Wafer Technology is pleased to
announce the expansion of its epitaxy ready wafer range with
the introduction of Monocrystal sapphire wafers.
Dasha Vitol, Sales Manager for Europe stated “Monocrystal
is pleased to support Wafer Technology as our new partner
in Europe. We see the European sapphire market as very promising
and one that is fast growing. It demands high-quality products
which Monocrystal is happy to offer to the customers of Wafer
Technology”.
Dr. Mark J. Furlong, Sales and Marketing Director of Wafer
Technology, commented "Wafer Technology is delighted
to promote this range of sapphire products. The addition of
Monocrystal's substrates to our product portfolio means that
we can now offer an even broader range of compound semiconductor
materials to our customers".
About Monocrystal PLC
Monocrystal PLC, a member of the Energomera Group is headquartered
in Stavropol, Russia. It was founded in 1984 and is one of
the world's largest sapphire growing and processing facilities.
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1st March 2006
Wafer Technology Shares in DTI Award to
Develop new InP based Thermophotovoltaic Devices
Wafer
Wafer Technology is pleased to
announce its participation in a new project to develop high
efficiency ThermoPhotoVoltaic (TPV) cell technology based
on InP substrate material. In partnership with the Centre
for Integrated Photonics and Oxford University, funding from
the DTI and EPSRC through the Technology Programme will support
a three year project to develop low cost high efficiency TPV
cells based on the InGaAs/InP material system.
Wafer Technology will be responsible for developing a new
range of low cost InP substrate technologies. CIP will perform
epitaxial growth, device fabrication and testing, and the
University of Oxford will engage in cell design and the fabrication
of fully packaged TPV modules.
Ray Brunton, the Company’s Crystal Growth Operations
Manager commented “As Europe’s leading manufacturer
of InP substrates and the main producer worldwide of GaSb
used in existing TPV devices, Wafer Technology has a long
standing involvement in TPV technology through other collaborative
projects, and is ideally placed to assess, control and exploit
the effects of starting material quality and price on the
performance and cost of TPV devices.”
Minister for Science and Innovation Lord Sainsbury said: “The
Technology Strategy helps develop competitive advantage for
British businesses so they can be at the cutting edge of the
global knowledge-based economy."
“It is about encouraging collaboration in order that
companies can invest for the future and develop new world-beating
products."
“I congratulate the project participants and wish them
every success.”
Notes to editors
THE TECHNOLOGY PROGRAMME
This project is part-funded by a Collaborative R&D grant
under the DTI Technology Programme.
Further information can be found at: www.dti.gov.uk/technologyprogramme. |
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7th February 2006
Wafer Technology Authors Leading Reference
on Indium Phosphide Crystal Growth
Wafer
Wafer Technology's expertise in
crystal growth has been recognised by an invited contribution
to a leading new reference entitled Bulk Crystal Growth of
Electronic, Optical and Optoelectronic Materials (Wiley).
Encompassing topics which include synthesis, single crystal
growth and dislocation reduction, this work provides a thorough
reference for all aspects of indium phosphide growth and is
based on the company’s many years of experience in manufacturing
high quality ingot and a diverse range of indium phosphide
wafer products in epitaxy-ready form.
Please click here
for more information on this important publication.
Wafer Technology is the leading European manufacturer of indium
phosphide and a wide range of other III-V compounds including
GaAs, InAs, GaSb and InSb. The company employs 40 people at
its manufacturing plant in England and is currently recruiting
for a variety of new positions.
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